Arsenic passivation for epitaxial deposition of ternary chalcoge

Details Arsenic passivation for epitaxial deposition of ternary chalcoge Arsenic passivation for epitaxial deposition of ternary chalcoge

1993-09-08

1995-03-21

Breneman, R. Bruce

Metal treatment

Stock

Ferrous

148 335, 148 33, 148 333, 437105, 437126, 437132, H01L 2912

Patent

active

053992067

ABSTRACT:
Ternary II-VI semiconductor films (16) are formed on a silicon substrate (12) by first depositing a monolayer of arsenic (14) or other Group V metal on a cleaned surface of the substrate. The ternary II-VI semiconductor film is then formed over the arsenic monolayer, either directly thereon or on top of an intermediate II-VI semiconductor buffer layer (18). The use of an arsenic passivating layer facilitates the epitaxial deposition of technologically important II-VI semiconductors such as ZnTe, CdTe, and HgCdTe on silicon substrates of arbitrary crystallographic orientation.

REFERENCES:
Georkilas et al. "Achiements and limitations in optimised GaAs films grown on Si by Moleculat-Beam Epitaxy" in J. Appl. Phys. 71(6), Mar. 1992, pp. 2679-2701.
A. N. Tiwari, et al, "Heteroepitaxy of CdTe(100) on Si(100) Using BaF.sub.2 -CaF.sub.2 (100) Buffer Layers", in Journal Of Crystal Growth, vol. 111, pp. 730-735 (1991).
R. Sporken, et al, "Current Status of Direct Growth of CdTe and HgCdTe on Silicon by Molecular Beam Epitaxy", in Journal Of Vaccum Science And Technology, B 10 pp. 1405-1409 (1992).
S. M. Johnson et al, "MOCVD Grown CdZnTe/GaAs/Si Substrates for Large-Area HgCdTe IRFPAs", in 1992 HGCDTE Workshop, Boston, Mass. (Oct. 13-15, 1992).
S. M. Johnson, et al, "Structural and Electrical Properties of Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si", in Materials Research Society Symposium Proceedings, vol. 161, pp. 351-356 (1990).
R. D. Bringans et al, "Initial Stages of Growth of ZnSe on Si", in Materials Research Society Symposium Proceedings, vol. 242, pp. 191-202 (1992).
R. D. Bringans et al, "Effect of Interface Chemistry of the Growth of ZnSe on the Si (100) Surface", in Physical Review B, vol. 45, No. 23, pp. 13,400-13,406 (15 Jun. 1992).

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