Arsenic passivation for epitaxial deposition of ternary chalcoge

Details Arsenic passivation for epitaxial deposition of ternary chalcoge Arsenic passivation for epitaxial deposition of ternary chalcoge

1993-04-06

1994-04-26

Kuncmund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 2, 437105, 437107, 437126, 148DIG64, C30B 2502

Patent

active

053063864

ABSTRACT:
Ternary II-VI semiconductor films (16) are formed on a silicon substrate (12) by first depositing a monolayer of arsenic (14) or other Group V metal on a cleaned surface of the substrate. The ternary II-VI semiconductor film is then formed over the arsenic monolayer, either directly thereon or on top of an intermediate II-VI semiconductor buffer layer (18). The use of an arsenic passivating layer facilitates the epitaxial deposition of technologically important II-VI semiconductors such as ZnTe, CdTe, and HgCdTe on silicon substrates of arbitrary crystallographic orientation.

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