Perry L. Merrill

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High voltage power schottky with aluminum barrier metal spaced f

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown
Patent

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IGBT with reduced forward voltage drop and reduced switching los

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Gettering of semiconductor substrate
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IGBT with reduced forward voltage drop and reduced switching...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate

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Integrated bipolar-MOS semiconductor device with common collecto

Patent

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Transistor with improved power dissipation capability

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Profile ID: LFUS-PAI-P-694470

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