Transistor with improved power dissipation capability

Details Transistor with improved power dissipation capability Transistor with improved power dissipation capability

1984-02-02

1985-03-19

Munson, Gene M.

357 20, 357 51, H01L 2972, H01L 2702, H01L 2906

Patent

active

045062803

ABSTRACT:
A bipolar power transistor with improved power dissipation capability. The device is designed to reduce the current crowding that obtains at the edge of a relatively wide emitter because of the debiasing effect of the voltage drop in the base region beneath that emitter. In a preferred embodiment, current crowding is reduced by sub-dividing a typical emitter finger into a central emitting region flanked by two peripheral emitting regions separated from the central region by a resistive portion. The resistive portions are desirably of the same conductivity type as the emitter; this design permits the use of relatively coarse geometries compatible with high yield.

REFERENCES:
patent: 3427511 (1969-02-01), Rosenzweig
patent: 3609460 (1971-09-01), Ollendorf
patent: 3619741 (1971-11-01), Morgan
patent: 4038680 (1977-07-01), Yagi et al.
patent: 4151542 (1979-04-01), Yajima et al.
Hamilton et al., Basic Integrated Circuit Engineering, McGraw-Hill, N.Y., (1975), pp. 45, 231-233.
Ghandhi, Semiconductor Power Devices, Wiley, N.Y., (1977), pp. 152-156.
Grove, Physics and Technology of Semiconductor Devices, Wiley, N.Y., (1967), p. 110.

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