Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown
Patent
1996-10-15
1999-01-12
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With means to prevent edge breakdown
257481, 257485, H01L 27095, H01L 2947, H01L 29812
Patent
active
058594655
ABSTRACT:
A vertical conduction Schottky device having a reverse voltage rating in excess of 400 volts uses an aluminum barrier metal in contact with an N.sup.- epitaxial silicon surface. A diffused P.sup.+ guard ring surrounds the barrier metal contact and is spaced therefrom by a small gap which is fully depleted at a low reverse voltage to connect the ring to the barrier contact under reverse voltage conditions. Lifetime killing is used for the body of the diode.
REFERENCES:
patent: 3586542 (1971-06-01), MacRae
patent: 3599054 (1971-08-01), Lepselter et al.
patent: 3694719 (1972-09-01), Saxena
patent: 3783049 (1974-01-01), Sandera
patent: 3855612 (1974-12-01), Rosvold
patent: 3953243 (1976-04-01), Goetzberger et al.
patent: 4063964 (1977-12-01), Peressini et al.
patent: 4253105 (1981-02-01), Olmstead et al.
patent: 4370670 (1983-01-01), Nawata et al.
patent: 4373166 (1983-02-01), Bergeron et al.
patent: 4405934 (1983-09-01), Sloan
patent: 4536945 (1985-08-01), Gray et al.
patent: 4594602 (1986-06-01), Iimura et al.
patent: 4607270 (1986-08-01), Jesaka
patent: 4618871 (1986-10-01), Mitlehner
patent: 4641174 (1987-02-01), Baliga
patent: 4646115 (1987-02-01), Shannon et al.
patent: 4691223 (1987-09-01), Murakami et al.
patent: 4899199 (1990-02-01), Gould
patent: 4901120 (1990-02-01), Weaver et al.
patent: 5148240 (1992-09-01), Ohtsuka et al.
patent: 5158909 (1992-10-01), Ohtsuka
patent: 5418185 (1995-05-01), Todd et al.
patent: 5539237 (1996-07-01), Todd et al.
"Characteristics of Aluminum-Silicon Schottky Barrier Diode"; Solid-State Electronics, Pergamon Press, 1970, vol. 13, pp. 97-104 (Gr. Britain); A.Y.C. Yu and C.A. Mead.
"High-Speed Low-Loss p-n Diode Having a Channel Structure"; IEEE Transactions on Electron Devices, vol. ED-31, No. 9, Sep. 1994; Shimizu, et al.
"Novel Low-Loss and High-Speed Diode Utilizing an `Ideal` Ohmic Contact"; IEEE Transactions on Electron Devices; vol. ED-29, No. 2; 2/1982; Amemiya, et al.
"Multiemitter Schottky Barrier Transistor with Negligible Emitter-To-Emitter Gain"; IBM Technical Disclosure Bulletin; vol. 14, No. 4; 9/1971; G. Zeidenbergs.
"Power Transistor with Reduced Minority Carrier Storage"; IBM Technical Disclosure Bulletin;. vol. 19, No. 10; 3/1977; R.M. Bill and S.P. Gaur.
"The Pinch Rectifier: A Low-Forward-Drop High-Speed Power Diode"; IEEE Electron Device Letters; vol. EDL-5, No. 6; Jun. 1984; B. J. Baliga.
"Schottky Rectifiers for Low-Voltage Outputs"; Unitrode Corporation; P.L. Hower and C.E. Weaver.
Patent Abstracts of Japan, vol. 9, No. 136 (E-320), 12 Jun. 1985 & JP 60 020585 A (Sanyo Denki KK), 1 Feb. 1985.
"Schottky Barrier Diode with Isolated Guard Ring", IBM Technicla Disclosure Bulletin, vol. 20, No. 8, Jan. 1978, New York, US, pp. 3197-3198, XP002062843.
Patent Abstracts of Japan, vol. 6, No. 28 (E-095), 19 Feb. 1982 & JP 56 148871 A (NEC Corp.), 18 Nov. 1981.
Merrill Perry L.
Spring Kyle A.
International Rectifier Corporation
Ngo Ngan V.
LandOfFree
High voltage power schottky with aluminum barrier metal spaced f does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage power schottky with aluminum barrier metal spaced f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage power schottky with aluminum barrier metal spaced f will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1519354