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Kun-Zen Chang

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Dual gate LDMOSFET device for reducing on state resistance

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock
Patent

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Guard ring structure with deep N well on ESD devices

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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High performance DRAM structure employing multiple thickness gat

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent

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High performance DRAM structure employing multiple thickness gat

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent

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High performance DRAM structure employing multiple thickness gat

Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent

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Profile ID: LFUS-PAI-P-510929

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