High performance DRAM structure employing multiple thickness gat

Details High performance DRAM structure employing multiple thickness gat High performance DRAM structure employing multiple thickness gat

1999-11-01

2000-08-22

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, H01L 218242

Patent

active

06107134&

ABSTRACT:
A DRAM device having improved performance of peripheral circuitry is described. The performance is improved by selectively having MOS transistors with a thinner gate oxide in peripheral circuits having a lower voltage applied to their gate electrodes. The DRAM device will maintain reliability by having MOS transistors with a thicker gate oxide in the memory cells and selected peripheral circuitry that are subjected to a higher voltage at their gate electrodes. Further this invention describes methods of fabricating the DRAM device with selectively placed multiple gate oxide thickness.

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