4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Thin active physical layer which is
  6. Heterojunction

Kazushi Nakano

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Epitaxial growth method of semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
Patent

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II/VI-compound semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent

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Luminescent semiconductor device with antidiffusion layer on act

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent

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Manufacturing method for crystalline semiconductor material...

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate

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Method for manufacturing an oriented crystalline...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate

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Profile ID: LFUS-PAI-P-161337

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