Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2005-12-06
2005-12-06
Smith, Brad (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S486000
Reexamination Certificate
active
06972246
ABSTRACT:
A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.
REFERENCES:
patent: 2003/0104662 (2003-06-01), Hatano et al.
patent: 2003/0211666 (2003-11-01), Okumura
patent: 3344418 (2002-08-01), None
Fujino Toshio
Hitsuda Yukihisa
Nakano Kazushi
Sato Jun-ichi
Shiomi Michinori
Bell Boyd & Lloyd LLC
Smith Brad
Sony Corporation
LandOfFree
Method for manufacturing an oriented crystalline... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing an oriented crystalline..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing an oriented crystalline... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3507716