Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-12-08
2000-02-29
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 94, 257 96, 257103, 257751, H01L 3300
Patent
active
060312440
ABSTRACT:
A luminescent semiconductor device comprises: an active layer composed of a Group II-VI semiconductor device which comprises at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium, manganese and mercury, and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium. the Group II-VI compound semiconductor forming said active layer contains at least one element selected from the group consisting of magnesium, beryllium and cadmium as the Group II element and tellurium as the Group VI element. At least one antidiffusion layer preventing diffusion of these elements from the active layer is provided on at least one surface of the active layer.
REFERENCES:
patent: 5864171 (1999-01-01), Yamamoto et al.
Hino Tomonori
Ishibashi Akira
Kato Eisaku
Nakano Kazushi
Noguchi Hiroyasu
Sony Corporation
Tran Minh Loan
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