Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2007-03-13
2007-03-13
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C257SE21596
Reexamination Certificate
active
11293727
ABSTRACT:
A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.
REFERENCES:
patent: 2006/0024858 (2006-02-01), Kumomi et al.
Fujino Toshio
Hitsuda Yukihisa
Nakano Kazushi
Sato Jun-ichi
Shiomi Michinori
Bell Boyd & Lloyd LLP
Smith Bradley K.
Sony Corporation
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