4. Semiconductor device manufacturing: process
  5. Introduction of conductivity modifying dopant into...
  6. Involving nuclear transmutation doping

Jeffrey S. Flynn

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Doped group III-V nitride materials, and microelectronic...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate

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GaN-based devices using thick (Ga, Al, In)N base layers

Metal treatment – Barrier layer stock material – p-n type – Having at least three contiguous layers of semiconductive...
Reexamination Certificate

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III-nitride optoelectronic device structure with high Al...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate

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III-V nitride substrate boule and method of making and using...

Chemical apparatus and process disinfecting – deodorizing – preser – Physical type apparatus – Apparatus for treating solid article or material with fluid...
Reexamination Certificate

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III-V nitride substrate boule and method of making and using...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2193816

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