Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Involving nuclear transmutation doping
Reexamination Certificate
2011-03-29
2011-03-29
Warden, Jill (Department: 1773)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Involving nuclear transmutation doping
C422S001000, C422S251000, C422S245100, C422S292000, C422S307000, 43, 43, 43, 43, C117S097000, C117S088000, C117S087000, C117S952000, C117S090000, C117S095000, C438S046000, C438S604000, C438S605000, C438S607000, C438S608000, C438S787000, C257S615000, C257S103000, C257S201000, C257S627000, C428S698000
Reexamination Certificate
active
07915152
ABSTRACT:
A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107defects cm−2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour. Nuclear transmutation doping may be applied to an (Al,Ga,In)N article comprises a boule, wafer, or epitaxial layer.
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Brandes George R.
Flynn Jeffrey S.
Redwing Joan M.
Tischler Michael A.
Vaudo Robert P.
Chorbaji Monzer R
Cree Inc.
Gustafson Vincent K.
Hultquist IP
Warden Jill
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