III-V nitride substrate boule and method of making and using...

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Reexamination Certificate

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C422S001000, C422S251000, C422S145000, C422S307000, 43, 43, 43, 43, C117S097000, C117S088000, C117S087000, C117S952000, C117S090000, C117S095000

Reexamination Certificate

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07655197

ABSTRACT:
A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107defects cm−2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour.

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