III-nitride optoelectronic device structure with high Al...

Details III-nitride optoelectronic device structure with high Al... III-nitride optoelectronic device structure with high Al...

2007-10-16

2007-10-16

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S096000, C257S102000, C257S103000, C372S043010

Reexamination Certificate

active

10840515

ABSTRACT:
A III-nitride electronic device structure including doped material, an active region and a barrier material arranged to suppress transport of dopant from the doped material into the active region, wherein the barrier material comprises high-Al content AlxGayN, wherein x+y=1, and x≧0.50. In a specific aspect, AIN is used as a migration/diffusion barrier layer at a thickness of from about 5 to about 200 Angstroms, to suppress flux of magnesium and/or silicon dopant material into the active region of the III-nitride electronic device, e.g., a UV LED optoelectronic device.

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