Semiconductor device manufacturing: process
Utilizing varying dielectric thickness
Inventor
active
Angled nitrogen ion implantation for minimizing mechanical...
Determination of device failure characteristic
Epitaxial silicon growth and usage of epitaxial gate...
Fabrication of gate of P-channel field effect transistor...
Fabrication of oxide regions having multiple thicknesses using m
No associations
LandOfFree
Hyeon-Seag Kim does not yet have a rating. At this time, there are no reviews or comments for this inventor.
If you have personal experience with Hyeon-Seag Kim, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hyeon-Seag Kim will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-P-697129