Determination of device failure characteristic

Details Determination of device failure characteristic Determination of device failure characteristic

2006-12-26

2006-12-26

Barlow, John (Department: 2863)

Data processing: measuring, calibrating, or testing

Testing system

Of circuit

C702S108000

Reexamination Certificate

active

07155359

ABSTRACT:
For determining a failure characteristic of a semiconductor device, a leakage current characteristic is measured for the semiconductor device to determine a plurality of stress bias zones. A respective set of parameters that define a respective failure characteristic of the semiconductor device is determined for each of the stress bias zones such that the failure characteristic is accurately determined for a wide range of operating voltages.

REFERENCES:
patent: 6414508 (2002-07-01), London
patent: 6858448 (2005-02-01), Okada
patent: 2002/0030191 (2002-03-01), Das et al.
Lin, W; Pey, K; Dong, Z; Chooi, S; Ang, C; Zheng, J;“The Statistical Distribution of Perculation Current for Soft Breakdown in Ultrathin Gate Oxide”; IEEE Electron Device Letters; vol. 24, Issue 5, May 2003; pp. 336-338.

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