4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Combined with electrical contact or lead
  6. Of specified material other than unalloyed aluminum

Hsien-Ming Lee

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Barrier structure for semiconductor devices

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate

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Composite barrier layer

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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High performance metallization cap layer

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate

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Method and apparatus for fabricating metal layer

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate

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Method for copper surface smoothing

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2847499

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