Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-08-15
2006-08-15
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S795000, C427S595000
Reexamination Certificate
active
07091126
ABSTRACT:
An improvement in a copper damascene process is disclosed. The improvement comprises the step of projecting an electron beam on to a chemical mechanically polished material surface having copper filled etched trenches at a known angle of incidence with respect to the material surface for a known period of time, the electron beam having a beamwidth substantially covering the material surface and a known intensity.
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Streetman, Solid State Electronic Devices, 1990, Prentice Hall, 3rd e.dition, p. 339.
Healy, Jerry, “Current Technical Trends: Dual Damascene & Low-k Dielectrics,” © 2002 by Threshold Systems.
Chiou Wen-Chih
Kuo Han-Hsin
Lee Hsien-Ming
Shih Tsu
Su Hung-Wen
Chen Eric B.
Duane Morris LLP
Norton Nadine G.
Taiwan Semiconductor Manufacturing Company
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