Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2007-08-07
2007-08-07
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S640000, C257S758000, C257S760000, C257S761000, C257S763000, C257S764000, C257S765000, C257S766000, C257SE23011
Reexamination Certificate
active
10909980
ABSTRACT:
A semiconductor device having a nonconductive cap layer comprising a first metal element. The nonconductive cap layer comprises a first metal nitride, a first metal oxide, or a first metal oxynitride over conductive lines and an insulating material between the conductive lines. An interface region may be formed over the top surface of the conductive lines, the interface region including the metal element of the cap layer. The cap layer prevents the conductive material in the conductive lines from migrating or diffusing into adjacent subsequently formed insulating material layers. The cap layer may also function as an etch stop layer.
REFERENCES:
patent: 6680500 (2004-01-01), Low et al.
patent: 6690091 (2004-02-01), Chooi et al.
patent: 6709874 (2004-03-01), Ning
patent: 6727588 (2004-04-01), Abdelgadir et al.
patent: 6783694 (2004-08-01), Lee et al.
patent: 2003/0027393 (2003-02-01), Suguro
patent: 2005/0202664 (2005-09-01), Jawarani
Hu, C.-K., et al., “Comparison of Cu Electromigration Lifetime in Cu Interconnects Coated with Various Caps,” Applied Physics Letters, Aug. 4, 2003, pp. 869-871, vol. 83, No. 5, American Institute of Physics, College Park, MD, USA.
Ko, T. et al., “High Performance/ Reliability Cu Interconnect with Selective CoWP Cap,” 2003 Symposium on VLSI Technology Digest of Papers, 2003.
Tu, K.N., “Recent Advances on Electromigration in Very-Large-Scale-Integration of Interconnects,” Journal of Applied Physics, Nov. 1, 2003, pp. 5451-5473, vol. 84, No. 9, American Institute of Physics, College Park, MD, USA.
Hsieh Ching-Hua
Huang Cheng-Lin
Lee Hsien-Ming
Lin Jing-Cheng
Pan Shing-Chyang
Ngo Ngan V.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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