Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2004-12-28
2008-11-18
Le, Thao X. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S627000
Reexamination Certificate
active
07453149
ABSTRACT:
A composite barrier layer provides superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends throughout the semiconductor device. The composite barrier layer may be formed in regions where it is disposed between two conductive layers and in regions where it is disposed between a conductive layer and a dielectric material. The composite barrier layer may consist of various pluralities of layers and the arrangement of layers that form the composite barrier layer may differ as the barrier layer extends throughout different sections of the device. Amorphous layers of the composite barrier layer are generally disposed to form boundaries with dielectric materials and crystalline layers are generally disposed to form boundaries with conductive materials such as interconnect materials.
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Hsieh Ching-Hua
Huang Cheng-Lin
Lee Hsien-Ming
Liang Mong-Song
Lin Jing-Cheng
Arora Ajay K
Duane Morris LLP
Le Thao X.
Taiwan Semiconductor Manufacturing Co. Ltd.
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