Method and apparatus for fabricating metal layer

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S677000, C205S205000, C205S295000, C257SE21586

Reexamination Certificate

active

10833154

ABSTRACT:
A method of electrochemical deposition (ECD) provides a barrier and a seed layer on a substrate. The surfaces of the substrate are pre-treated before a metal layer is electrochemically deposited thereon in an electrochemical plating cell with a physical or a chemical surface treatment process. The electrochemical plating cell is covered by a cap to prevent evaporation of the electrolyte solution. The electrochemical plating cell includes a substrate holder assembly with a lift seal, e.g., with a contact angle θ less than 90° between the lift seal and the substrate. The substrate holder assembly includes a substrate chuck at the rear side of the substrate.

REFERENCES:
patent: 5950071 (1999-09-01), Hammond et al.
patent: 6117299 (2000-09-01), Rinne et al.
patent: 6258220 (2001-07-01), Dordi et al.
patent: 6395642 (2002-05-01), Liu et al.
patent: 6399479 (2002-06-01), Chen et al.
patent: 6399486 (2002-06-01), Chen et al.
patent: 6426283 (2002-07-01), Chen et al.
patent: 6436816 (2002-08-01), Lee et al.
patent: 6582578 (2003-06-01), Dordi et al.
patent: 6620251 (2003-09-01), Kitano
patent: 6699373 (2004-03-01), Woodruff et al.
patent: 2004/0104120 (2004-06-01), Wang et al.
patent: 2005/0064703 (2005-03-01), Kondo et al.
patent: 2005/0206796 (2005-09-01), Okabe
patent: 03-052808 (1991-03-01), None
patent: 07-233499 (1995-09-01), None
patent: 2003-221696 (2003-08-01), None
patent: 475224 (2002-02-01), None
patent: 478107 (2002-03-01), None
patent: 573311 (2004-01-01), None

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