Gary M. Dolny

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Bidirectional vertical power MOS device and fabrication method

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Buried gate-field termination structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Dense trench MOSFET with decreased etch sensitivity to...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate

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Dense trench MOSFET with decreased etch sensitivity to...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Lateral MOSFET with substrate drain connection

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Profile ID: LFUS-PAI-P-729982

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