Dense trench MOSFET with decreased etch sensitivity to...

Details Dense trench MOSFET with decreased etch sensitivity to... Dense trench MOSFET with decreased etch sensitivity to...

2003-07-11

2008-10-14

Rose, Kiesha L (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000

Reexamination Certificate

active

07436021

ABSTRACT:
A power MOSFET100has a source metal112that contacts silicided source regions114through vias160etched in an insulating layer200. The silicide layer225provides for a relatively small but highly conductive contact and thus reduces RDSON. The insulating material may be any suitable material including and not limited to one or a combination of materials such as BPSG, PSG, silicon dioxide and silicon nitride. The insulating layer is relatively thin and does not extend deeply into the gate trench.

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