Lateral MOSFET with substrate drain connection

Details Lateral MOSFET with substrate drain connection Lateral MOSFET with substrate drain connection

2008-12-19

2011-10-18

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S341000, C257S401000

Reexamination Certificate

active

08039897

ABSTRACT:
In one form a lateral MOSFET includes an active gate positioned laterally between a source region and a drain region, the drain region extending from an upper surface of a monocrystalline semiconductor body to a bottom surface of the monocrystalline semiconductor body, and a non-active gate positioned above the drain region. In another form the lateral MOSFET includes a gate positioned laterally between a source region and a drain region, the drain region extending from an upper surface of a monocrystalline semiconductor body to a bottom surface of the monocrystalline semiconductor body, the source region and the drain region being of a first conductivity type, a heavy body region of a second conductivity type in contact with and below the source region, and the drain region comprising a lightly doped drain (LDD) region proximate an edge of the gate and a sinker extending from the upper surface of the monocrystalline body to the bottom surface of the monocrystalline semiconductor body.

REFERENCES:
patent: 6600182 (2003-07-01), Rumennik
patent: 7282765 (2007-10-01), Xu et al.
patent: 2002/0185705 (2002-12-01), Saitoh et al.
patent: 2003/0089947 (2003-05-01), Kawaguchi et al.
patent: 2003/0201456 (2003-10-01), Saitoh et al.
patent: 2006/0118832 (2006-06-01), Visser et al.
patent: 2007/0114608 (2007-05-01), Letavic
J.C.W. Ng, J.K.O. Sin and L. Guan, “A Novel Planar Power MOSFET With Laterally Uniform Body and Ion-Implanted JFET Region”, Electron Device Letters, IEEE, Apr. 2008, vol. 29, Issue: 4, pp. 375-377, ISSN 0741-3106, current version published Mar. 21, 2008.
International Search Report with Written Opinion in corresponding PCT Application (PCT/US2009/067151), completed Jun. 23, 2010, total 7 pages.

Affiliated with

Also associated with

Rating

Lateral MOSFET with substrate drain connection does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lateral MOSFET with substrate drain connection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral MOSFET with substrate drain connection will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4272437