4. Semiconductor device manufacturing: process
  5. Coating with electrically or thermally conductive material
  6. To form ohmic contact to semiconductive material

Dmitri Loubychev

Inventor

Rate now
  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Inventor

active

Buffer layers for device isolation of devices grown on silicon

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Buffer layers for device isolation of devices grown on silicon

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Dislocation-free InSb quantum well structure on Si using...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Dopant confinement in the delta doped layer using a dopant...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Semiconductor buffer architecture for III-V devices on...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dmitri Loubychev does not yet have a rating. At this time, there are no reviews or comments for this inventor.

If you have personal experience with Dmitri Loubychev, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dmitri Loubychev will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-P-3192616

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.

Canada

 Charities
 Companies
 MP Candidates
 Patents
 Employee Salary Disclosure

World

 Places of the World
 Scientific Papers

United States

 Banks
 Companies
 Counties
 Patents
 Employee Salary Disclosure