Dislocation-free InSb quantum well structure on Si using...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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C257SE29068, C257SE29081, C257SE29091

Reexamination Certificate

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07573059

ABSTRACT:
A device grade III-V quantum well structure formed on a silicon substrate using a composite buffer architecture and the method of manufacture is described. Embodiments of the present invention enable III-V InSb quantum well device layers with defect densities below 1×108cm−2to be formed on silicon substrates. In an embodiment of the present invention, an InSb quantum well layer is sandwiched between two larger band gap barrier layers. In an embodiment of the present invention, InSb quantum well layer is strained. In a specific embodiment, the two larger band gap barrier layers are graded.

REFERENCES:
patent: 4872046 (1989-10-01), Morkoc et al.
patent: 5883564 (1999-03-01), Partin
patent: 6133593 (2000-10-01), Boos et al.
patent: 6320212 (2001-11-01), Chow
patent: 2002/0093332 (2002-07-01), Schroeder et al.
patent: 2005/0040429 (2005-02-01), Uppal
patent: 2005085916 (2005-03-01), None
Akaha et al., JP2005-85916, Mar. 31, 2005, Machine translation in English.
M Mori et al., Heteroepitaxial growth of InSb films on a Si(001) substrate via AISb buffer layer, Applied Surface Science 216 (2003) pp. 569-574.
A. Wan et al., Characterization of GaAs grown by Molecular Beam Epitaxy on Vicinal Ge (100) Substrates. J. Vac. Sci. Technol. B 22(4) Jul./Aug. 2004, pp. 1893-1897.
R.M. Sieg et al., Toward device-quality GaAs Growth by Molecular Beam Epitaxy on Offcut Ge/SiGe/Si substrates, J. Vac. Sci. Technol. B 16(3), May/Jun. 1998, pp. 1471-1474.
S. Scholz et al., MOVPE Growth of GaAs on Ge Substrates by Inserting a Thin Low Temperature Buffer Layer, Cryst. Res. Technol. 41, No. 2 (2006), pp. 111-116.
M. Doczy et al., U.S. Appl. No. 11/305,452, Extreme High Mobility CMOS Logic, 12/152005.

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