Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-08-02
2009-08-11
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE29068, C257SE29081, C257SE29091
Reexamination Certificate
active
07573059
ABSTRACT:
A device grade III-V quantum well structure formed on a silicon substrate using a composite buffer architecture and the method of manufacture is described. Embodiments of the present invention enable III-V InSb quantum well device layers with defect densities below 1×108cm−2to be formed on silicon substrates. In an embodiment of the present invention, an InSb quantum well layer is sandwiched between two larger band gap barrier layers. In an embodiment of the present invention, InSb quantum well layer is strained. In a specific embodiment, the two larger band gap barrier layers are graded.
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Chow Loren A.
Fastenau Joel M.
Hudait Mantu K.
Liu Amy W. K.
Loubychev Dmitri
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Malsawma Lex
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