Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2010-10-29
2011-10-11
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C257S014000, C257SE21403, C257SE21407
Reexamination Certificate
active
08034675
ABSTRACT:
A composite buffer architecture for forming a III-V device layer on a silicon substrate and the method of manufacture is described. Embodiments of the present invention enable III-V InSb device layers with defect densities below 1×108cm−2to be formed on silicon substrates. In an embodiment of the present invention, a dual buffer layer is positioned between a III-V device layer and a silicon substrate to glide dislocations and provide electrical isolation. In an embodiment of the present invention, the material of each buffer layer is selected on the basis of lattice constant, band gap, and melting point to prevent many lattice defects from propagating out of the buffer into the III-V device layer. In a specific embodiment, a GaSb/AlSb buffer is utilized to form an InSb-based quantum well transistor on a silicon substrate.
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Fastenau Joel M.
Hudait Mantu K.
Liu Amy W. K.
Loubychev Dmitri
Shaheen Mohamad A.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Taylor Earl
Vu David
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