4. Semiconductor device manufacturing: process
  5. Formation of electrically isolated lateral semiconductive...
  6. Grooved and refilled with deposited dielectric material

Chong Wee Lim

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Epitaxial CoSi2 on MOS devices

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate

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Method for forming an epitaxial cobalt silicide layer on MOS...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate

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Method for large-scale fabrication of atomic-scale...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate

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Method of making low-leakage architecture for sub-0.18 .mu.m sal

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent

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Method to form shallow trench isolations with rounded...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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Profile ID: LFUS-PAI-P-1158203

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