Cheng-Eng D. Chen

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Dram cell and method

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MOS transistor with improved radiation hardness

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MOS transistor with improved radiation hardness

Fishing – trapping – and vermin destroying
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NMOS transistor having inversion layer source/drain contacts

Fishing – trapping – and vermin destroying
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Silicided structures having openings therein

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
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Profile ID: LFUS-PAI-P-435218

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