Silicided structures having openings therein

Details Silicided structures having openings therein Silicided structures having openings therein

1987-04-15

1992-11-24

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257773, H01L 2354

Patent

active

051667703

ABSTRACT:
Preferred embodiments include silicon complementary MOSFETs with titanium silicided junctions (38, 58) and direct contacts of aluminum metallization (61, 62) to the p junctions (58) which avoids the high contact resistance of the silicide (60) to p silicon (58). Preferred embodiments also include silicided polysilicon lines without corresponding silicided MOSFET junctions.

REFERENCES:
patent: 3906540 (1975-09-01), Hollins
patent: 4536945 (1985-08-01), Gray et al.
patent: 4613885 (1986-09-01), Haken
patent: 4621276 (1986-11-01), Malhi
patent: 4700465 (1987-10-01), Sirkin
"Modified Polysilicon Emitter Process", IBM Technical Disclosure Bulletin vol. 22, No. 9 Feb. 1980-Barson pp. 4052-4053.
"Ohmic Contacts to Semiconductor Devices Using Barrier Layers of Aluminum and Titanium" IBM Technical Disclosure-vol. 28, No. 4, Sep. 1985 pp. 1417-1418.

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