Fishing – trapping – and vermin destroying
Patent
1990-03-02
1991-06-25
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 45, 437 63, 437938, H01L 21425
Patent
active
050266560
ABSTRACT:
An MOS transistor is disclosed which has a guard ring for prevention of source-to-drain conduction through the isolation oxide after exposure to ionizing radiation. In the described example of an n-channel transistor, a p+ region is formed at the edges of the source region in a self-aligned fashion relative to the gate electrode so as not to extend under the gate to contact the drain region. This p+ region forms a diode which retards source-drain conduction even if a channel is formed under the isolating field oxide where the gate electrode overlaps onto the field oxide. The structure may be silicided for improved series resistance. An example of the transistor formed in an SOI configuration is also disclosed.
REFERENCES:
patent: 3752711 (1973-08-01), Kooi
patent: 4053916 (1977-10-01), Cricchi et al.
patent: 4591890 (1986-05-01), Lund et al.
patent: 4753896 (1988-06-01), Matloubian
patent: 4965213 (1990-10-01), Blake
Lee et al., "Island Effects in CMOS/SOS Transistors", IEEE Trans. E.D., vol. ED-25, No. 8 (Aug. 1978), pp. 971-978.
Tihanyi, et al., "Properties of ESFI MOS Transistors Due to the Floating Substrate and the Finite Volume", IEEE Trans. E.D., vol. ED-22, No. 11, (Nov. 1975), pp. 1017-1023.
Tihany, et al., "Influence of the Floating Substrate Potential on the Characteristics of EFSI MOS Transistors", Solid State Electrons, vol. 18 (Pergamon, 1975), pp. 309-314.
Blake Terence G.
Chen Cheng-Eng D.
Matloubian Mishel
Chaudhuri Olik
Comfort James T.
Kesterson James C.
Ojan Ourmazd S.
Sharp Melvin
LandOfFree
MOS transistor with improved radiation hardness does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOS transistor with improved radiation hardness, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS transistor with improved radiation hardness will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1039669