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Ayumu Tsujimura

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Formation method for semiconductor layer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Reexamination Certificate

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Formation method for semiconductor layer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
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Group III-V nitride semiconductor light-emitting device...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
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Method for fabricating a nitride semiconductor device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
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Method for fabricating nitride semiconductor, method for...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Dopant introduction into semiconductor region
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Profile ID: LFUS-PAI-P-167565

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