Formation method for semiconductor layer

Details Formation method for semiconductor layer Formation method for semiconductor layer

2006-09-19

2006-09-19

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

Using heat

C117S088000, C117S105000, C117S106000, C117S952000

Reexamination Certificate

active

07108745

ABSTRACT:
After a Group III-V compound semiconductor layer, to which a p-type dopant has been introduced, has been formed over a substrate, the compound semiconductor layer is annealed. In the stage of heating the compound semiconductor layer, atoms, deactivating the p-type dopant, are eliminated from the compound semiconductor layer by creating a temperature gradient in the compound semiconductor layer.

REFERENCES:
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patent: 6030849 (2000-02-01), Hasegawa et al.
patent: 6232623 (2001-05-01), Morita
patent: 05-183189 (1993-07-01), None
patent: 08-213656 (1996-08-01), None
patent: 09-298311 (1997-11-01), None
Shuji Nakamura et al , “Hole Compensation Mechanism of P-Type GaN Films”, Jpn. J. Appl. Phys. vol. 31 (1992) pp. 1258-1266, Part 1, No. 5A, May 1992.

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