4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Combined with electrical contact or lead
  6. Of specified material other than unalloyed aluminum

Artur P. Balasinski

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Dual landing pad structure in an integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent

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Dual landing pad structure including dielectric pocket

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Patent

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Integrated circuit fabrication method with buried oxide isolatio

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
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Method for forming controlled voids in interlevel dielectric

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent

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Method for forming controlled voids in interlevel dielectric

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
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Profile ID: LFUS-PAI-P-339962

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