Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-09-27
1998-12-08
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257758, H01L 2348, H01L 2352, H01L 2940
Patent
active
058474641
ABSTRACT:
A method of forming a thick interlevel dielectric layer containing sealed voids formed in a controlled manner, over a substantially planar surface in semiconductor device structure, and the semiconductor structure formed according to such a method. The sealed voids are used to reduce interlevel capacitance. A plurality of metal signal lines are formed over a globally planarized insulator. A thick layer of first conformal interlevel dielectric is deposited over the metal signal lines and over the intermetal spacings formed between the metal signal lines. Because of the thickness, flow properties, and manner of deposition of the interlevel dielectric and the aspect ratio the intermetal spacings, voids are formed in the first conformal interlevel dielectric, in the intermetal spacings. This interlevel dielectric is then etched or polished back to the desired thickness, which exposes the voids in the wider intermetal spacings, but does not expose voids in the narrower intermetal spacings. An etchback may be chosen so that all voids are exposed. The exposed voids are filled with a flowable dielectric which can be then etched back to leave the flowable dielectric in the exposed voids. A second conformal interlevel dielectric layer is formed over the first conformal interlevel dielectric to further bury the sealed voids, insuring that they do not get exposed in further process steps. The second conformal interlevel dielectric may be formed in a thin layer to allow the flowable dielectric to remain near the top of the interlevel dielectric structure to reduce the possibility of poisoned vias.
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Balasinski Artur P.
Li Ming M.
Singh Abha R.
Clark S. V.
Galanthay Theodore E.
Jorgenson Lisa K.
Lager Irena
Saadat Mahshid D.
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