Dual landing pad structure including dielectric pocket

Details Dual landing pad structure including dielectric pocket Dual landing pad structure including dielectric pocket

1997-10-02

2000-07-25

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

257758, 257773, H01L 2348

Patent

active

06093963&

ABSTRACT:
A dual landing pad structure is formed with a dielectric pocket. A first opening is formed through a first dielectric layer to expose a portion of a diffused region. A first polysilicon landing pad is formed over the first dielectric layer and in the opening. This landing pad will provide for smaller geometries and meet stringent design rules such as that for contact space to gate. A dielectric pocket is formed over the polysilicon landing pad over the active region. A second conductive landing pad is formed over the polysilicon landing pad and the dielectric pocket. A second dielectric layer is formed over the landing pad having a second opening therethrough exposing a portion of the landing pad. A conductive contact, such as aluminum, is formed in the second contact opening. The conductive contact will electrically connect with the diffused region through the landing pad. Misalignment of the conductive contact opening over the landing pad may be tolerated without invading design rules. The landing pad and the dielectric pocket will enhance planarization to provide for better step coverage of the metal contact in the second opening.

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