Method of reliably capping copper interconnects

Details Method of reliably capping copper interconnects Method of reliably capping copper interconnects

1998-08-10

2000-12-26

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438628, 438629, 438636, 438643, 438644, 438653, 438654, 438678, 438687, H01L 2144, H01L 2148, H01L 2150

Patent

active

061658944

ABSTRACT:
The adhesion of a diffusion barrier or capping layer to a Cu or Cu alloy interconnect member is significantly enhanced by treating the exposed surface of the Cu or Cu alloy interconnect member with an ammonia plasma followed by depositing the diffusion barrier layer on the treated surface. Embodiments include electroplating or electroless plating Cu or a Cu alloy to fill a damascene opening in a dielectric interlayer, chemical mechanical polishing, treating the exposed surface of the Cu/Cu alloy interconnect with an ammonia plasma, and depositing a silicon nitride diffusion barrier layer directly on the plasma treated surface.

REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 5447887 (1995-09-01), Filipiak et al.
patent: 5728629 (1998-03-01), Mizuno et al.
patent: 5801098 (1998-09-01), Fiordalice et al.
S. Hymes et al., "Passivation of copper by silicide formation in dilute silane", J. Appl. Phys. vol. 71, No. 9, May 1, 1992, pp. 4623-4625.

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