4. Fishing, trapping, and vermin destroying

Minh Van Ngo

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Amorphized barrier layer for integrated circuit interconnects

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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Annealing ambient in integrated circuit interconnects

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate

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Atomic layer barrier layer for integrated circuit interconnects

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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Barrier metal oxide interconnect cap in integrated circuits

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate

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BPSG, SA-CVD liner/P-HDP gap fill

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate

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Profile ID: LFUS-PAI-P-34707

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