Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-04-12
2008-11-18
Chen, Jack (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S284000
Reexamination Certificate
active
07452778
ABSTRACT:
Nano-wires, preferably of less than 20 nm diameter, can be formed with minimized risk of narrowing and breaking that results from silicon atom migration during an annealing process step. This is accomplished by masking portion of the active layer where silicon atomer would otherwise agglomerate with a material such as silicon dioxide, silicon nitride, or other dielectric that eliminates or substantially reduces the silicon atom migration. Nano-wires, nanotubes, nano-rods, and other features can be formed and can optionally be incorporated into devices, such as by use as a channel region in a transistor device.
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Chen Hung-Wei
Hu Chenming
Lee Di-Hong
Yang Fu-Liang
Yeo Yee-Chia
Chen Jack
Reames Matthew
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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