Plasma immersion ion implantation process using a...

Details Plasma immersion ion implantation process using a... Plasma immersion ion implantation process using a...

2007-11-06

2007-11-06

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C438S514000, C156S345370

Reexamination Certificate

active

11284975

ABSTRACT:
A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The method further includes introducing into the chamber a precursor gas including a species to be ion implanted in the workpiece and applying an RF bias to the electrostatic chuck, the RF bias having a bias level corresponding to the ion implantation profile depth.

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