Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2007-11-06
2007-11-06
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S474000, C438S513000, C257SE21302
Reexamination Certificate
active
10604905
ABSTRACT:
A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.
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Burnham Jay S.
Nakos James S.
Quinlivan James J.
Roque, Jr. Bernie A.
Shank Steven M.
Estrada Michelle
International Business Machines - Corporation
Schmeiser, Olsen & Watts; William D. Sabo
Tobergte Nicholas J.
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