Method for ion implanting insulator material to reduce...

Details Method for ion implanting insulator material to reduce... Method for ion implanting insulator material to reduce...

2007-01-23

2007-01-23

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S301000, C438S367000, C257S288000

Reexamination Certificate

active

11003000

ABSTRACT:
An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielectric material with plural gas bubbles distributed within the volume of the dielectric material to reduce the dielectric constant of the material, the gas bubbles being formed by ion implantation of a gaseous species into the dielectric material.

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Van de Ven, Evert P., Connick, I-Wen, and Harrus, Alain S., “Advantages of Dual Frequency PECVD for Deposition of ILD and Passivation Films”,IEEE, Proceeding

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