Method of forming metal silicide

Details Method of forming metal silicide Method of forming metal silicide

2007-04-17

2007-04-17

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21593

Reexamination Certificate

active

10772938

ABSTRACT:
A method of optimizing the formation of nickel silicide on regions of a MOSFET structure, has been developed. The method features formation of nickel silicide using an anneal procedure performed at a temperature below which nickel silicide instability and agglomeration occurs. A thin titanium interlayer is first formed on the MOSFET structure prior to nickel deposition, allowing an anneal procedure, performed after nickel deposition, to successfully form nickel silicide at a temperature of about 400° C. To obtain the desired conformality and thickness uniformity the thin titanium interlayer is formed via an atomic layer deposition procedure.

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