High-k gate dielectric and method of manufacture

Details High-k gate dielectric and method of manufacture High-k gate dielectric and method of manufacture

2011-08-16

2011-08-16

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21423

Reexamination Certificate

active

07998820

ABSTRACT:
A device and method of formation are provided for a high-k gate dielectric and gate electrode. The high-k dielectric material is formed, and a silicon-rich film is formed over the high-k dielectric material. The silicon-rich film is then treated through either oxidation or nitridation to reduce the Fermi-level pinning that results from both the bonding of the high-k material to the subsequent gate conductor and also from a lack of oxygen along the interface of the high-k dielectric material and the gate conductor. A conductive material is then formed over the film through a controlled process to create the gate conductor.

REFERENCES:
patent: 5298447 (1994-03-01), Hong
patent: 6110784 (2000-08-01), Gardner et al.
patent: 6380104 (2002-04-01), Yu
patent: 6407435 (2002-06-01), Ma et al.
patent: 6432776 (2002-08-01), Ono
patent: 6444592 (2002-09-01), Ballantine et al.
patent: 6511876 (2003-01-01), Buchanan et al.
patent: 6689675 (2004-02-01), Parker et al.
patent: 6703780 (2004-03-01), Shiang et al.
patent: 6716695 (2004-04-01), Hattangady et al.
patent: 6727134 (2004-04-01), Chen et al.
patent: 6737362 (2004-05-01), Chen et al.
patent: 6750126 (2004-06-01), Visokay et al.
patent: 6770923 (2004-08-01), Nguyen et al.
patent: 6790755 (2004-09-01), Jeon
patent: 6797644 (2004-09-01), Watt et al.
patent: 6809370 (2004-10-01), Colombo et al.
patent: 6875678 (2005-04-01), Jung et al.
patent: 6894369 (2005-05-01), Irino et al.
patent: 6897095 (2005-05-01), Adetutu et al.
patent: 6933225 (2005-08-01), Werkhoven et al.
patent: 6974764 (2005-12-01), Brask et al.
patent: 7030024 (2006-04-01), Ho et al.
patent: 7037845 (2006-05-01), Brask et al.
patent: 7074680 (2006-07-01), Doczy et al.
patent: 7101753 (2006-09-01), Kamiyama et al.
patent: 7129563 (2006-10-01), Cosnier et al.
patent: 7138692 (2006-11-01), Tamura et al.
patent: 7344934 (2008-03-01), Li
patent: 2002/0137250 (2002-09-01), Nguyen et al.
patent: 2003/0032281 (2003-02-01), Werkhoven et al.
patent: 2005/0101147 (2005-05-01), Labelle et al.
patent: 2007/0176242 (2007-08-01), Lee et al.
patent: 2008/0001237 (2008-01-01), Chang et al.
Chang, V.S., et al., “Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectric Deposited by Nano-Laminated Atomic Layer Deposition (NL-ALD),” vol. 1 (2006), in press, ECS Transaction, 11 pgs.
Choi, C., et al., “The Effects of Nitrogen and Silicon Profile on High-K MOSFET Performance and Bias Temperature Instability,” Symposium on VLSI Technology Digest of Technical Papers (2004) pp. 214-215.
Hou, Y.T., et al., “High Performance Tantalum Carbide Metal Gate Stacks for nMOSFET Application,” IEEE (2005), 4 pgs.
Kimizuka, N., et al., “NBTI Enhancement by Nitrogen Incorporation into Ultrathin Gate Oxide for 0.10-μm Gate CMOS Generation,” Symposium on VLSI Technology Digest of Technical Papers (2000) pp. 92-93.
Sekine, K., et al., “Nitrogen Profile Control by Plasma Nitridation Technique for Poly-Si Gate HsSiON CMOSFET with Excellent Interface Property and Ultra-Low Leakage Current,” IEDM (2003) pp. 103-106.
Tamura, Y., et al., “SiN-Capped HfSiON Gate Stacks with Improved Bias Temperature Instabilites for 65 nm-node Low-Standby-Power Transistors,” Symposium on VLSI Technology Digest of Technical Papers (2004) pp. 210-211.
Chinese Patent Office, Chinese Office Action, Jul. 3, 2009, 3 Pages, Application No. 200710193991X.

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