Particle beam assisted modification of thin film materials

Details Particle beam assisted modification of thin film materials Particle beam assisted modification of thin film materials

2011-08-23

2011-08-23

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257SE21331

Reexamination Certificate

active

08003498

ABSTRACT:
Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.

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