Deposition of TiN films in a batch reactor

Details Deposition of TiN films in a batch reactor Deposition of TiN films in a batch reactor

2011-06-28

2011-06-28

Lund, Jeffrie R (Department: 1716)

Coating apparatus

Program, cyclic, or time control

Having prerecorded program medium

C118S696000, C118S724000, C118S715000

Reexamination Certificate

active

07966969

ABSTRACT:
Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4is flowed into the reactor in temporally separated pulses. The NH3can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4pulses, or the NH3can be flowed continuously into the reactor while the TiCl4is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

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