Method for forming a DRAM capacitor having improved capacitance

Details Method for forming a DRAM capacitor having improved capacitance Method for forming a DRAM capacitor having improved capacitance

1998-04-30

2000-08-15

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, 438396, 438398, 438690, 438964, H01L 218242

Patent

active

061035718

ABSTRACT:
The present invention discloses a method for forming a DRAM capacitor that has improved charge capacitance which can be carried out by first depositing an oxide layer on a semiconducting substrate, forming an uneven surface on the oxide layer, forming a capacitor node in the oxide layer to expose the substrate, depositing a polysilicon layer on top of the oxide layer and in the node such that the uneven surface on the oxide layer is substantially reproduced in a top surface of the polysilicon layer, depositing a dielectric layer and a second polysilicon layer sequentially on top of the first polysilicon layer to reproduce the uneven surface on the oxide layer, and then defining the DRAM capacitor.

REFERENCES:
patent: 5573973 (1996-11-01), Sethi et al.
patent: 5879988 (1999-03-01), Chen et al.
patent: 5937294 (1999-08-01), Sandhu et al.

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