VLSI fabrication processes for introducing pores into...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S781000, C438S780000, C257SE21576

Reexamination Certificate

active

11050621

ABSTRACT:
Porous dielectric layers are produced by introducing pores in pre-formed composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the conductive material is provided with a relatively smooth continuous surface on which to deposit.

REFERENCES:
patent: 4357451 (1982-11-01), McDaniel
patent: 4882008 (1989-11-01), Garza et al.
patent: 4885262 (1989-12-01), Ting et al.
patent: 5504042 (1996-04-01), Cho et al.
patent: 5686054 (1997-11-01), Barthel et al.
patent: 5700844 (1997-12-01), Hedrick et al.
patent: 5789027 (1998-08-01), Watkins et al.
patent: 5849640 (1998-12-01), Hsia et al.
patent: 5851715 (1998-12-01), Barthel et al.
patent: 5858457 (1999-01-01), Brinker et al.
patent: 5920790 (1999-07-01), Wetzel et al.
patent: 6140252 (2000-10-01), Cho et al.
patent: 6171661 (2001-01-01), Zheng et al.
patent: 6177329 (2001-01-01), Pang
patent: 6232658 (2001-05-01), Catabay et al.
patent: 6258735 (2001-07-01), Xia et al.
patent: 6268276 (2001-07-01), Chan et al.
patent: 6270846 (2001-08-01), Brinker et al.
patent: 6271273 (2001-08-01), You et al.
patent: 6312793 (2001-11-01), Grill et al.
patent: 6329017 (2001-12-01), Liu et al.
patent: 6329062 (2001-12-01), Gaynor
patent: 6340628 (2002-01-01), Van Cleemput et al.
patent: 6365266 (2002-04-01), MacDougall et al.
patent: 6383466 (2002-05-01), Domansky et al.
patent: 6383955 (2002-05-01), Matsuki et al.
patent: 6386466 (2002-05-01), Ozawa et al.
patent: 6387453 (2002-05-01), Brinker et al.
patent: 6391932 (2002-05-01), Gore et al.
patent: 6392017 (2002-05-01), Chandrashekar
patent: 6420441 (2002-07-01), Allen et al.
patent: 6444715 (2002-09-01), Mukherjee et al.
patent: 6455417 (2002-09-01), Bao et al.
patent: 6479374 (2002-11-01), Ioka et al.
patent: 6500770 (2002-12-01), Cheng et al.
patent: 6548113 (2003-04-01), Birnbaum et al.
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6576345 (2003-06-01), Cleemput et al.
patent: 6596467 (2003-07-01), Gallagher et al.
patent: 6596654 (2003-07-01), Bayman et al.
patent: 6610362 (2003-08-01), Towle
patent: 6632478 (2003-10-01), Gaillard et al.
patent: 6667147 (2003-12-01), Gallagher et al.
patent: 6677251 (2004-01-01), Lu et al.
patent: 6715498 (2004-04-01), Humayun et al.
patent: 6753250 (2004-06-01), Hill et al.
patent: 6756085 (2004-06-01), Waldfried et al.
patent: 6797643 (2004-09-01), Rocha-Alvarez et al.
patent: 6805801 (2004-10-01), Humayun et al.
patent: 6812043 (2004-11-01), Bao et al.
patent: 6815373 (2004-11-01), Singh et al.
patent: 6831284 (2004-12-01), Demos et al.
patent: 6846380 (2005-01-01), Dickinson et al.
patent: 6848458 (2005-02-01), Shrinivasan et al.
patent: 6849549 (2005-02-01), Chiou et al.
patent: 6867086 (2005-03-01), Chen et al.
patent: 6903004 (2005-06-01), Spencer et al.
patent: 6914014 (2005-07-01), Li et al.
patent: 7018918 (2006-03-01), Kloster et al.
patent: 2002/0001973 (2002-01-01), Wu et al.
patent: 2002/0016085 (2002-02-01), Huang et al.
patent: 2002/0034626 (2002-03-01), Liu et al.
patent: 2002/0064341 (2002-05-01), Fauver et al.
patent: 2002/0106500 (2002-08-01), Albano et al.
patent: 2002/0123240 (2002-09-01), Gallagher et al.
patent: 2002/0141024 (2002-10-01), Retschke et al.
patent: 2002/0192980 (2002-12-01), Hogle et al.
patent: 2003/0064607 (2003-04-01), Leu et al.
patent: 2003/0119307 (2003-06-01), Bekiaris et al.
patent: 2003/0157248 (2003-08-01), Watkins et al.
patent: 2003/0198895 (2003-10-01), Toma et al.
patent: 2004/0069410 (2004-04-01), Moghadam et al.
patent: 2004/0096586 (2004-05-01), Schulberg et al.
patent: 2004/0096593 (2004-05-01), Lukas et al.
patent: 2004/0096672 (2004-05-01), Lukas et al.
patent: 2004/0099952 (2004-05-01), Goodner et al.
patent: 2004/0101633 (2004-05-01), Zheng et al.
patent: 2004/0102031 (2004-05-01), Kloster et al.
patent: 2004/0161532 (2004-08-01), Kloster et al.
patent: 2004/0170760 (2004-09-01), Meagley et al.
patent: 2004/0185679 (2004-09-01), Ott et al.
patent: 2005/0064698 (2005-03-01), Chang et al.
patent: WO95/07543 (1995-03-01), None
R.D. Miller et al., “Phase-Separated Inorganic-Organic Hybrids for Microelectronic Applications,” MRS Bulletin, Oct. 1997, pp. 44-48.
Jin et al., “Nanoporous Silica as an Ultralow-kDielectric,” MRS Bulletin, Oct. 1997, pp. 39-42.
Asoh et al., “Fabrication of Ideally Ordered Anodic Porous Alumina with 63 nm Hole Periodocity Using Sulfuric Acid,” J. Vac. Sci. Technol. B 19(2), Mar./Apr. 2001, pp. 569-572.
Asoh et al., “Conditions for Fabrication of Ideally Ordered Anodic Porous Alumina Using Pretextured AI,” Journal of the Electrochemica Society, 148 (4) B152-B156 (2001) pp. B152-B156.
Holland et al., “Nonlithographic Technique for the Production of Large Area High Density Gridded Field Sources,” J. Vac. Sci. Technol. B 17(2), Mar./Apr. 1999, pp. 580-582.
Masuda et al. “Highly Ordered Nanochannel-Array Architecture in Anodic Alumina,” App. Phys. Lett. 71(19), Nov. 1997, pp. 2770-2772.
Clube et al., White Paper from Holotronic Technologies SA; downloaded from www.hdotronic.com/whitepaper/fine-patt.pdf on Mar. 12, 2002.
Meli et al., “Self-Assembled Masks for the Transfer of Nanometer-Scale Patterns into Surfaces: Characterization by AFM and LFM”, Nano Letters, vol. 2, No. 2, 2002, 131-135.
“Shipley Claims Porous Low K Dielectric Breakthrough,” Press Release Mar. 17, 2003.
Jeffrey M. Calvert and Michael K. Gallagher, Semiconductor International, 26 (12), 56 (2003).
Van Bavel et al. , Future Fab International, 61, (2004).
Caluwaerts et al, “Post Patterning Meso Porosity Creation: A Potential Solution For Pore Sealing,” IITC 2003.
U.S. Office Action mailed May 31, 2006, from U.S. Appl. No. 10/941,502.
U.S. Office Action mailed May 30, 2006, from U.S. Appl. No. 10/785,235.
U.S. Office Action mailed May 31, 2006, from U.S. Appl. No. 10/849,568.
U.S. Office Action mailed Jun. 15, 2006, from U.S. Appl. No. 10/800,409.
Kelman et al., “Method for Reducing Stress in Porous Dielectric Films”, U.S. Appl. No. 11/369,311, filed Mar. 6, 2006.
U.S. Office Action mailed Jun. 28, 2006, from U.S. Appl. No. 10/825,888.
U.S. Office Action mailed May 2, 2006, from U.S. Appl. No. 10/295,965.
U.S. Office Action mailed Aug. 9, 2005, from U.S. Appl. No. 10/295,965.
U.S. Office Action mailed Jun. 14, 2006, from U.S. Appl. No. 10/789,103.
U.S. Office Action mailed Aug. 24, 2005, from U.S. Appl. No. 10/404,693.
U.S. Office Action mailed Sep. 1, 2005, from U.S. Appl. No. 10/672,305.
Cho et al., “Plasma Treatments of Molecularly Templated Nanoporous Silica Films,” Electrochemical and Solid-State Letters, 4 (4) G35-G38 (2001).
Yung et al., “Spin-on Mesoporous Silica Films with Ultralow Dielectric Constants, Ordered Pore Structures, and Hydrophobic Surfaces,” Adv. Mater. 2001, 13, No. 14, 1099-1102.
Schulberg et al., “System for Deposition of Mesoporous Materials,” U.S. Appl. No. 10/295,965, filed Nov. 15, 2002, 64 Pages.
Watkins et al., “Mesoporous Materials and Methods,” U.S. Appl. No. 10/301,013, filed Nov. 21, 2002, 34 Pages.
Justin F. Gaynor, “In-Situ Treatment of Low-K Films With a Silylating Agent After Exposure To Oxidizing Environments,” U.S. Appl. No. 10/056,926, filed Jan. 24, 2002, 34 Pages.
Humayun et al., “Method for Forming Porous Films By Porogen Removel Combined With In SITU Surface Modification”, Novellus Corporation, U.S. Appl. No. 10/404,693, filed Mar. 31, 2003, pp. 1-32.
Tipton et al., “Method Of Porogen Removal From Porous Low-K Films Using UV Radiation”, Novellus Systems, Inc., U.S. Appl. No. 10/672,311, filed Sep. 26, 2003, pp. 1-27.
Jan, C.H., et al,90NM Generation, 300mm Wafer Low k ILD/Cu Interconnect Technology,2003 IEEE Interconnect Technology Conference.
Wu et al., U.S. Appl. No. 10/789,103, entitled: Methods For Producing Low-K CDO Films With Low Residual Stress.
Wu et al., U.S. Appl. No. 10/820,525, entitled: Methods For

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

VLSI fabrication processes for introducing pores into... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with VLSI fabrication processes for introducing pores into..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and VLSI fabrication processes for introducing pores into... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3776035

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.