Very low temperature CVD process with independently variable...

Details Very low temperature CVD process with independently variable... Very low temperature CVD process with independently variable...

2007-05-29

2007-05-29

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S513000, C438S680000, C257SE21316

Reexamination Certificate

active

10838052

ABSTRACT:
A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silicon, nitrogen, hydrogen or oxygen into the reactor chamber, generating a torroidal RF plasma current in a reentrant path through the processing region by applying RF plasma source power at an HF frequency on the order of about 10 MHz to a portion of a reentrant conduit external of the chamber and forming a portion of the reentrant path, applying RF plasma bias power at an LF frequency on the order of one or a few MHz to the workpiece, and maintaining the temperature of the workpiece under about 100 degrees C.

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